Presentation + Paper
13 March 2024 Low-loss 800nm-thick PECVD silicon nitride photonic platform on 300-mm wafer
Author Affiliations +
Abstract
In this paper we demonstrate the development and optimization of an 800 nm-thick Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) photonic platform on a 300-mm silicon wafer. The implementation of ArF immersion lithography contributes to superior manufacturing processes, as it provides excellent critical dimension (CD) uniformity inter- and intra-wafers, make it an optimal platform of production of integrated circuits and nanoscale devices.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Hong Cai, Bo Li, Yiding Lin, Haitao Yu, Steven Hou Jang Lee, Chin Khang Tew, Jae Ok Yoo, Charmaine Goh, Shervonne Woon, Doris Keh Ting Ng, Navab Singh, Xianshu Luo, and Lennon Yao Ting Lee "Low-loss 800nm-thick PECVD silicon nitride photonic platform on 300-mm wafer", Proc. SPIE 12898, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics XVII, 1289802 (13 March 2024); https://doi.org/10.1117/12.3002146
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KEYWORDS
Silicon nitride

Waveguides

Semiconducting wafers

Plasma enhanced chemical vapor deposition

Film thickness

Silicon photonics

Chemical mechanical planarization

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