Hong Cai,1 Bo Li,1 Yiding Lin,1 Haitao Yu,1 Steven Hou Jang Lee,1 Chin Khang Tew,1 Jae Ok Yoo,1 Charmaine Goh,1 Shervonne Woon,1 Doris Keh Ting Ng,1 Navab Singh,1 Xianshu Luohttps://orcid.org/0000-0002-5531-5689,1 Lennon Yao Ting Lee1
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In this paper we demonstrate the development and optimization of an 800 nm-thick Plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) photonic platform on a 300-mm silicon wafer. The implementation of ArF immersion lithography contributes to superior manufacturing processes, as it provides excellent critical dimension (CD) uniformity inter- and intra-wafers, make it an optimal platform of production of integrated circuits and nanoscale devices.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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