In-situ integrated processing of high Tc superconductors and related materials by MOCVD for the fabrication of hybrid superconductor/semiconductor devices

Rajendra Singh; Sanjai Sinha; J. T. C. Ng; N. J. Hsu

doi:10.1117/12.21024

1 October 1990 In-situ integrated processing of high Tc superconductors and related materials by MOCVD for the fabrication of hybrid superconductor/semiconductor devices

Rajendra Singh, Sanjai Sinha, J. T. C. Ng, N. J. Hsu

Author Affiliations +

Proceedings Volume 1292, Superconductivity Applications for Infrared and Microwave Devices; (1990) https://doi.org/10.1117/12.21024
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

Rapid isothermal processing and microwave-excited gases (N2O + O2 + He) have been used to deposit YBCO films on YSZ substrates. The thermal cycle represents the lowest thermal budget used by any other researcher. A Tc of 75 K was observed. These results coupled with the capability of depositing YBCO on BaF2/Si substrate indicate the usefulness of MOCVD for the practical realization of superconductor/semiconductor hybrid devices.

Citation Download Citation

Rajendra Singh, Sanjai Sinha, J. T. C. Ng, and N. J. Hsu "In-situ integrated processing of high Tc superconductors and related materials by MOCVD for the fabrication of hybrid superconductor/semiconductor devices", Proc. SPIE 1292, Superconductivity Applications for Infrared and Microwave Devices, (1 October 1990); https://doi.org/10.1117/12.21024

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