The phenomenon of kinetic inductance, exhibited by superconducting transmission lines in which the conductor
separation and thickness are on the order of a magnetic field penetration depth , can be exploited both for device applications
and for the measurement of fundamental superconductor properties. Penetration depths in the high-Ta materials (thousands of
angstroms) are typically an order of magnitude or more larger than the penetration depths of the low temperature
superconductors (hundreds of angstroms). With regard to geometric tolerances, fabrication restrictions for high-Ta
micmelectronic devices utilizing kinetic inductance are therefore much less severe than for their low-Ta counterparts.
Microwave S-parameter measurements on microstrip resonators made from very thin conductors, separated by a thin, lowloss
dielectric, can be used to determine the absolute value of the penetration depth, th applicability of kinetic inductance
effects in the superconductors, and the surfa,e resistivities of the superconductors. This paper describes the fabricatioti of
high-Ta superconducting thin films of BiCaSrCuO, and the patterning of these films into integrated microstrip transmission
line resonators designed to exhibit the effects of kinetic inductance. Of particular interest are techniques we have developed to
fabricate very thin, low-loss dielectric layers on BiCaSrCuO. We report on microwave S-parameter measurements on these
resonators, and on the functional dependence of transmission line phase velocity and characteristic impedance with temperature
and microwave power density, especially at temperatures just below T. These results are then used to infer high frequency
penetration depths and surface resistivities in BiCaSiCuO. Applications are also suggested.