1 October 1990 Patterning of high Tc superconducting thin films on Si substrates
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Interdiffusion and reaction at the interface between an YBaCuO film and a Si substrate degrade the superconductivity of the film. Using a buffer layer, the film-substrate interaction can be reduced. Thus, a superconducting thin film is formed on a silicon substrate. A new method of patterning superconducting thin films based on the Si-YBaCuO intermixing has been developed. On a silicon substrate, a thin layer of noble metal was first evaporated and patterned using photolithography. An YBaCuO film was then deposited by e-beam evaporation and annealed in a rapid thermal processing system. After a high temperature annealing, the patterned feature became superconducting separated by Si-YBaCuO intermixed areas. Superconducting micron-sized the structures with Tc of 73 K have been demonstrated. This patterning technique may be useful for making high-Tc superconducting interconnects and devices on a Si wafer.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qiyuan Y. Ma, Qiyuan Y. Ma, Chester Shu, Chester Shu, Edward S. Yang, Edward S. Yang, Chin-An Chang, Chin-An Chang, C. E. Farrell, C. E. Farrell, } "Patterning of high Tc superconducting thin films on Si substrates", Proc. SPIE 1292, Superconductivity Applications for Infrared and Microwave Devices, (1 October 1990); doi: 10.1117/12.21027; https://doi.org/10.1117/12.21027

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