Study of InGaAs/InP avalanche photodiodes to suppress edge breakdown

Xiao Shang; Hongling Peng; Hualiang Zhao; Bowen Niu; Xueshang Wang; Tiancai Wang; Peng Cao; Xuyan Zhou; Jianxin Zhang; Fengxin Dong

doi:10.1117/12.3008034

24 November 2023 Study of InGaAs/InP avalanche photodiodes to suppress edge breakdown

Xiao Shang, Hongling Peng, Hualiang Zhao, Bowen Niu, Xueshang Wang, Tiancai Wang, Peng Cao, Xuyan Zhou, Jianxin Zhang, Fengxin Dong

Author Affiliations +

Proceedings Volume 12935, Fourteenth International Conference on Information Optics and Photonics (CIOP 2023); 129354H (2023) https://doi.org/10.1117/12.3008034
Event: Fourteenth International Conference on Information Optics and Photonics (CIOP 2023), 2023, Xi’an, China

Abstract

With the development of optoelectronic technology, InGaAs/InP avalanche photodiodes (APDs) are more and more used in fiber-optic communication systems with high bit rates and long-distance transmission because of their advantages of high sensitivity, low noise, and high speed. When etching mesa-type InGaAs/InP APDs, the edges of the mesa sidewalls are susceptible to premature breakdown due to the increased electric field, which affects the device's performance. In this paper, a shallow-etched mesa-type InGaAs/InP APD with a guard ring structure is proposed in order to suppress edge breakdown. By using Silvaco TCAD software for simulation, the results show that the structure proposed in this paper can limit the active region in the center region, effectively suppress the edge electric field, make the electric field distribution more uniform, and suppress the uncertainty of breakdowns, so that the reliability of the device is greatly increased. The final optimized device has a punch-through voltage of 16 V and a breakdown voltage of 41.3 V. The device has a diameter of 80 μm. The dark current is about 2.02 nA, and the gain is 36 when the breakdown voltage is 95%.

(2023) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Xiao Shang, Hongling Peng, Hualiang Zhao, Bowen Niu, Xueshang Wang, Tiancai Wang, Peng Cao, Xuyan Zhou, Jianxin Zhang, and Fengxin Dong "Study of InGaAs/InP avalanche photodiodes to suppress edge breakdown", Proc. SPIE 12935, Fourteenth International Conference on Information Optics and Photonics (CIOP 2023), 129354H (24 November 2023); https://doi.org/10.1117/12.3008034

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