PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The lithographic imaging performance of contact holes is limited by the efficient use of light and contrast fading caused by 3D mask effects. ”Split pupil” exposures have been proposed to mitigate contrast fading for line-space-patterns. We present a simulation study investigating the extendibility of split pupil exposures to dense arrays of contacts on dark field and light field masks using different mask absorber options. Our simulations indicate that the combination of split pupil exposures and low-n/low-k absorbers can offer comfortable imaging performance for arrays of 10 nm square contacts with a pitch of 20 nm on a dark field mask. These results indicate the potential of combining low-n absorbers and split pupil exposure strategies to enable high-NA EUV lithography to reach its ultimate optical resolution limits.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Tim Brunner, Eelco van Setten, Claire van Lare, Mark van de Kerkhof, "Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography," Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 1295302 (10 April 2024); https://doi.org/10.1117/12.3009996