Computational distortion prediction method considering characteristics of EUV lithography

Jong-hyun Hwang; Jae-il Lee; Hyeon-jun Ha; Jung-hwan Kim; Kwang-sun Song; Young-jin Park

doi:10.1117/12.3010639

10 April 2024 Computational distortion prediction method considering characteristics of EUV lithography

Jong-hyun Hwang, Jae-il Lee, Hyeon-jun Ha, Jung-hwan Kim, Kwang-sun Song, Young-jin Park

Proceedings Volume 12953, Optical and EUV Nanolithography XXXVII; 129530L (2024) https://doi.org/10.1117/12.3010639
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) lithography systems have become one of the representative system nodes in the semiconductor industry. As EUV systems have been widely implemented to shrink integrated circuits, the importance of overlay control is increasing as much as patterning control. In terms of overlay control in lithography systems, a projection optics module is a key factor in determining the distortion of the overlay. In this paper, we present characteristics of EUV projection optics affecting overlay and propose a methodology predicting distortion of the overlay by calculating pattern shift using aberrations of EUV projection optics as an input. Also, the non-telecentricity of EUV systems is taken into account while calculating pattern shift as understanding the optical feature of EUV is required to explain the results of calculated distortion. Experimental results of dynamic random-access memory (DRAM) devices are presented to understand different behaviors between the projection optics structure of DUV and EUV scanners.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Jong-hyun Hwang, Jae-il Lee, Hyeon-jun Ha, Jung-hwan Kim, Kwang-sun Song, and Young-jin Park "Computational distortion prediction method considering characteristics of EUV lithography", Proc. SPIE 12953, Optical and EUV Nanolithography XXXVII, 129530L (10 April 2024); https://doi.org/10.1117/12.3010639

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