AFM observation of EUV photoresist shrinkage due to electron-beam exposure

Ryosuke Kizu; Kazuhiro Kumagai; Ichiko Misumi; Akiko Hirai; Satoshi Gonda

doi:10.1117/12.3010107

10 April 2024 AFM observation of EUV photoresist shrinkage due to electron-beam exposure

Ryosuke Kizu, Kazuhiro Kumagai, Ichiko Misumi, Akiko Hirai, Satoshi Gonda

Proceedings Volume 12955, Metrology, Inspection, and Process Control XXXVIII; 129551U (2024) https://doi.org/10.1117/12.3010107
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Scanning electron microscopy (SEM) is generally used for line edge roughness (LER) measurement; however, it is difficult to achieve high precision LER measurement of photoresist due to shrinkage caused by electron-beam (EB) exposure. We have developed a metrological tilting-atomic force microscopy (AFM), which has a tip-tilting mechanism to measure vertical sidewall. In the last conference, SPIE-AL-2023, we demonstrated quantitative evaluation of shrinkage of ArF photoresist due to EB exposure by measuring the pattern before and after EB exposure [Kizu et al., Proc. SPIE 12496, 1249605 (2023)]. In this study, we will demonstrate quantitative evaluation of shrinkage of EUV photoresist due to EB exposure by the AFM technology.

Conference Presentation

Citation Download Citation

Ryosuke Kizu, Kazuhiro Kumagai, Ichiko Misumi, Akiko Hirai, and Satoshi Gonda "AFM observation of EUV photoresist shrinkage due to electron-beam exposure", Proc. SPIE 12955, Metrology, Inspection, and Process Control XXXVIII, 129551U (10 April 2024); https://doi.org/10.1117/12.3010107

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