PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
In this study, we present the development of PFAS-free AZ® FZero 3DT positive photoresist and AZ® FZero NX-3015 negative photoresist. These novel photoresists were enabled by the utilization of a newly developed PFAS-free M PAG (photoacid generator). Both AZ® FZero 3DT and AZ® FZero NX-3015 photoresists have exhibited comparable lithography performance to their PFAS-containing comparative examples on both Silicon (Si) and Copper (Cu) substrates. Furthermore, the newly developed PFAS-free M PAG has displayed good stability on Cu substrates, outperforming the commercial oxime sulfonate PAG. This stability is particularly crucial for the successful application of photoresists in the fabrication of re-distribution layers (RDL) in advanced semiconductor packaging.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Hung-Yang Chen, Ionela-Daniela Carja, Chunwei Chen, Ashley Moore, Philipp Hans Fackler, Ralph Dammel, "PFAS-free I-line strong photoacid generator for positive-tone and negative-tone thick-film photoresists," Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129571H (9 April 2024); https://doi.org/10.1117/12.3009506