Poster + Paper
9 April 2024 PFAS-free I-line strong photoacid generator for positive-tone and negative-tone thick-film photoresists
Author Affiliations +
Conference Poster
Abstract
In this study, we present the development of PFAS-free AZ® FZero 3DT positive photoresist and AZ® FZero NX-3015 negative photoresist. These novel photoresists were enabled by the utilization of a newly developed PFAS-free M PAG (photoacid generator). Both AZ® FZero 3DT and AZ® FZero NX-3015 photoresists have exhibited comparable lithography performance to their PFAS-containing comparative examples on both Silicon (Si) and Copper (Cu) substrates. Furthermore, the newly developed PFAS-free M PAG has displayed good stability on Cu substrates, outperforming the commercial oxime sulfonate PAG. This stability is particularly crucial for the successful application of photoresists in the fabrication of re-distribution layers (RDL) in advanced semiconductor packaging.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Hung-Yang Chen, Ionela-Daniela Carja, Chunwei Chen, Ashley Moore, Philipp Hans Fackler, and Ralph Dammel "PFAS-free I-line strong photoacid generator for positive-tone and negative-tone thick-film photoresists", Proc. SPIE 12957, Advances in Patterning Materials and Processes XLI, 129571H (9 April 2024); https://doi.org/10.1117/12.3009506
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KEYWORDS
Photoresist materials

Photoacid generators

Copper

Silicon

Film thickness

Lithography

Fabrication

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