Study on the ordered growth of ZnO nanowire arrays on SiO2-mask patterned GaN template for ultraviolet light-emitting diodes

Li Li; Yingtian Xu; Jie Fan; He Zhang; Liang Jin; Yonggang Zou; Xiaohui Ma

doi:10.1117/12.3016344

1 February 2024 Study on the ordered growth of ZnO nanowire arrays on SiO₂-mask patterned GaN template for ultraviolet light-emitting diodes

Li Li, Yingtian Xu, Jie Fan, He Zhang, Liang Jin, Yonggang Zou, Xiaohui Ma

Author Affiliations +

Proceedings Volume 13068, Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023); 130680X (2024) https://doi.org/10.1117/12.3016344
Event: Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023), 2023, Hefei, China

Abstract

Highly position-controlled ZnO nanowire arrays are grown on a SiO₂-mask-patterned GaN substrate by hydrothermal method. The morphology of ZnO nanowires (NWs) can be modulated, and a comprehensive study is conducted for the first time. The morphology relies on the nucleation process that can be adjusted by varying growth time and solution concentration. Spectral responsibility curve and electroluminescent characteristics (EL) are measured, which both present great ultraviolet (UV) photoelectric properties. Meanwhile, the position of ZnO NWs is highly controllable as designed and the morphology of NWs are largely consistent, which pave the way to fabricate the high performance device resulting from the interaction between light.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Li Li, Yingtian Xu, Jie Fan, He Zhang, Liang Jin, Yonggang Zou, and Xiaohui Ma "Study on the ordered growth of ZnO nanowire arrays on SiO₂-mask patterned GaN template for ultraviolet light-emitting diodes", Proc. SPIE 13068, Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023), 130680X (1 February 2024); https://doi.org/10.1117/12.3016344

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