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1 October 1990 Ferroelectric coatings by the sol-gel method
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Abstract
Recent research on ferroelectric films via the sol-gel method is discussed, with emphases on preparative problems, electrical and optical properties, and applications in devices. Ferroelectric thin films, including LiNbO3, BaTiO3, KNbO3, Pb(ZrTii)O3, and (SrBai..)Nb2O6, were investigated. The structures of these ferroelectric materials are primary made up of networks of oxygen octahedras. They crystallized at relatively low temperature (< 0.5 Tm ), where Tm is liquidus temperature. Typical applications of ferroelectrics considered here include holographic memory and non-volatile semiconductor memory devices.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching Jih Chen, Yuhuan Xu, and John D. Mackenzie "Ferroelectric coatings by the sol-gel method", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); https://doi.org/10.1117/12.21662
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