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1 October 1990 Growth of detector quality MCT in a vertical MOCVD reactor
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Abstract
HgCdTe epitaxial layers were grown on (111)B CdTe substrates in a commercially purchased and modified vertical MOCVD reactor. DIPTe, DMCd and elemental Hg were used as reactants and growth takes place at 360°C. Run-to-run reproducibility of composition and electrical properties was studied over a hundred growth runs. Hall measurements show that n-type material is consistently obtained with carrier concentrations in the mid 10'4/cm3 and mobilities as high as good bulk material. LWIR photoconductive devices were fabricated with this low carrier concentration material and tested. The responsivity and the lifetime measurements indicated that these devices perform as well as those fabricated with purchased LPE material. Excellent device performance was obtained on 80-element photodiode arrays fabricated with x''0.3 p-type HgCdTe samples by formin9 flf/p junctions by ion implantation. R0A values obtained are ..1x1Ob Q-cm2 at 77K for Xco 5.7 1m and are highly uniform within an 80-element array. We also report on an all MOCVD grown p-on-n double-layer heterojunction (DLHJ) photodiode with Xco 8.1 um.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Suha Oguz, Ronald J. Olson Jr., Donald L. Lee, Lindley T. Specht, and Vilnis G. Kreismanis "Growth of detector quality MCT in a vertical MOCVD reactor", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); https://doi.org/10.1117/12.21705
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