1 October 1990 Heat capacity in quantum dots of nonlinear optical materials
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Abstract
An attempt is made to study the heat capacity in 1uantum dots ( QDs) of nonlinear optical materials, taking n-LdGeAs2 as an example which also finds extensive applications in light emitting diodes. have for rnul ate d the he at c apac i ty in the QDs o f the s al d mater Ial by deducing a new dispersion law, within the framework of k.p. formalism Considering all types of anisotropies in the energy para- ieters. It is found, that the heat capacity increases with increa sing carrier density and decreases with increasing film thickness in an oscillatory manna' for both the eases respectively. The well known special eases have been derived from our generalized formula- tions under certain special conditions. The theoretical ex'essions are in agreement with the experimental observations as reported elsewhere.
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Kamakhya Prasad Ghatak, Kamakhya Prasad Ghatak, Ardhendhu Ghoshal, Ardhendhu Ghoshal, Sankar Bhattacharyya, Sankar Bhattacharyya, Manabendra Mondal, Manabendra Mondal, } "Heat capacity in quantum dots of nonlinear optical materials", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21689; https://doi.org/10.1117/12.21689
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