Low-leakage-current high-breakdown-voltage InSb p+n diodes

Tai Ping Sun; Si-Chen Lee; Kou-Chen Liu; Sheng-Jehn Yang

doi:10.1117/12.21708

1 October 1990 Low-leakage-current high-breakdown-voltage InSb p+n diodes

Tai Ping Sun, Si-Chen Lee, Kou-Chen Liu, Sheng-Jehn Yang

Proceedings Volume 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors; (1990) https://doi.org/10.1117/12.21708
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

The effect of photochemical deposition of Si02 on the currentvoltage characteristics of the InSb pn diodes was studied. By applying different voltages on the gate electrode over the pn junction periphery, various kinds of current-voltage characteristics can be induced, including multiple negative differential resistance in forward bias. This strongly indicates that the major part of the current, especially the reverse leakage current, flows through the surface of the p+n junction. Reverse leakage current as low as 20 A/cm2 at -1.1 V for a p+n diode with n-type doping concentration of 2 x i0 cm3 could be easily achieved by applying a gate voltage of -9 V. It is also found that diodes with similar performance can be fabricated by properly adjusting the photochemical vapor deposition passivation process.

Citation Download Citation

Tai Ping Sun, Si-Chen Lee, Kou-Chen Liu, and Sheng-Jehn Yang "Low-leakage-current high-breakdown-voltage InSb p+n diodes", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); https://doi.org/10.1117/12.21708

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