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1 October 1990 Low-leakage-current high-breakdown-voltage InSb p+n diodes
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Abstract
The effect of photochemical deposition of Si02 on the currentvoltage characteristics of the InSb pn diodes was studied. By applying different voltages on the gate electrode over the pn junction periphery, various kinds of current-voltage characteristics can be induced, including multiple negative differential resistance in forward bias. This strongly indicates that the major part of the current, especially the reverse leakage current, flows through the surface of the p+n junction. Reverse leakage current as low as 20 A/cm2 at -1.1 V for a p+n diode with n-type doping concentration of 2 x i0 cm3 could be easily achieved by applying a gate voltage of -9 V. It is also found that diodes with similar performance can be fabricated by properly adjusting the photochemical vapor deposition passivation process.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tai Ping Sun, Si-Chen Lee, Kou-Chen Liu, and Sheng-Jehn Yang "Low-leakage-current high-breakdown-voltage InSb p+n diodes", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); https://doi.org/10.1117/12.21708
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