1 October 1990 Measurement of the birefringence in cadmium telluride electro-optic modulators
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Cadmium telluride is the primary choice for electro-optic modulator applications in the mid infrared region - particularly at 10.6 micron. In principle, single crystal CdTe in the rest state is only weakly birefringent along the {1 1O} planes. Some internal birefringence does exist, however, due to fabricated-in stress birefringence and birefringence associated with slippage of the crystal along the {1 1 1} planes. When a voltage is applied to a CdTe crystal, the total phase shift introduced by the crystal is a result of the combination of the electro-optic effect and the residual birefringence. This paper will present a method of measuring the phase shift produced by residual birefringence in CdTe modulators at 10.6 micron. The test method is a modification of the crossed polarizer technique. Test results will be presented for CdTe modulators with voltage and without voltage.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary L. Herrit, Gary L. Herrit, Herman E. Reedy, Herman E. Reedy, "Measurement of the birefringence in cadmium telluride electro-optic modulators", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21699; https://doi.org/10.1117/12.21699

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