1 October 1990 Nonlinearities in semiconductors for optical limiting
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Abstract
We present measurements of nonlinear absorption and refraction in semiconductors used in the realization of optical limiters. We show that nonlinear refraction at 532 nm in ZnSe is caused by a negative third order electronic Kerr effect in addition to the two-photon-absorption (2PA) induced carrier refraction. We have used time-resolved beam distortion, picosecond time-resolved degenerate four-wave mixing and our recently developed Z-scan technique to determine the sign and magnitude of the 2PA coefficient, the bound electronic nonlinearity, n2 and the refractive index change per free carrier.
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Ali A. Said, Ali A. Said, Mansoor Sheik-Bahae, Mansoor Sheik-Bahae, David J. Hagan, David J. Hagan, Edesly J. Canto-Said, Edesly J. Canto-Said, Yuan-Yen Wu, Yuan-Yen Wu, James Young, James Young, Tai-Huei Wei, Tai-Huei Wei, Eric W. Van Stryland, Eric W. Van Stryland, } "Nonlinearities in semiconductors for optical limiting", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21679; https://doi.org/10.1117/12.21679
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