1 October 1990 Nonlinearities in semiconductors for optical limiting
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We present measurements of nonlinear absorption and refraction in semiconductors used in the realization of optical limiters. We show that nonlinear refraction at 532 nm in ZnSe is caused by a negative third order electronic Kerr effect in addition to the two-photon-absorption (2PA) induced carrier refraction. We have used time-resolved beam distortion, picosecond time-resolved degenerate four-wave mixing and our recently developed Z-scan technique to determine the sign and magnitude of the 2PA coefficient, the bound electronic nonlinearity, n2 and the refractive index change per free carrier.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali A. Said, Ali A. Said, Mansoor Sheik-Bahae, Mansoor Sheik-Bahae, David J. Hagan, David J. Hagan, Edesly J. Canto-Said, Edesly J. Canto-Said, Yuan-Yen Wu, Yuan-Yen Wu, James Young, James Young, Tai-Huei Wei, Tai-Huei Wei, Eric W. Van Stryland, Eric W. Van Stryland, } "Nonlinearities in semiconductors for optical limiting", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21679; https://doi.org/10.1117/12.21679

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