1 October 1990 Single- and multiple-beam nonlinear absorption and refraction measurements in semiconductors
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Abstract
We describe picosecond single- and multiple-beam measurements of the nonlinear absorption and refraction in a variety of semiconductors. Single-beam and pump-probe transmission measurements are used to isolate instantaneous nonlinearities from cumulative processes. These techniques, together with a simple rate equation model, have allowed us to extract information regarding mid-gap levels and to measure both the two-photon absorption coefficients and the free carrier absorption cross sections in these samples. Our model, together with Z-scan and beam deflection measurements of the nonlinear refraction, has provided the change in index due to each photogenerated electron-hole pair.
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Arthur L. Smirl, Arthur L. Smirl, Thomas F. Boggess, Thomas F. Boggess, Jimmy Dubard, Jimmy Dubard, A. G. Cui, A. G. Cui, } "Single- and multiple-beam nonlinear absorption and refraction measurements in semiconductors", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21675; https://doi.org/10.1117/12.21675
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