1 October 1990 Spin-spray plating of spinel ferrite films on semiconductor substrates
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Abstract
The possibility of monolithic integration of microwave magnetic and semiconductor electronic components has been investigated by growing spinel ferrite films on GaAs and Si using the spin-spray plating (SSP) technique. Since film deposition by SSP is performed at temperatures as low as 100 C, this process facilitates deposition of ferrite material without any thermal deterioration of the underlying GaAs devices. This was demonstrated by depositing and patterning a Ni-Zn ferrite film on a portion of a GaAs wafer containing several MMIC circuits. X-ray diffraction analysis of SSP-grown ferrite films indicated that the films formed different crystallographic textures at different growth temperatures. To achieve the thicker films required for practical device applications, deposition of a 25-pm-thick Ni-Zn ferrite film was demonstrated by a multiple deposition method with intermediate drying processes. The magnetic properties of these films, measured by ferrpmagnetic resonance (FMR) , compared well to those of commercially available polycrystalline material. The electrical resistivity of the films varied as a function of their chemical composition. The dielectric loss tangent (tan 5) of the as-deposited film was observed to be greater than ten. However, the measured resistivity dependence of dielectric loss tangent showed that the dominant microwave loss mechanism was not due to conduction alone. Post-growth annealing experiments indicated that moisture in the films trapped during the SSP process caused high dielectric losses, and that annealing could reduce the loss tangent value.
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Kee Chang Yoo, Kee Chang Yoo, Salvador H. Talisa, Salvador H. Talisa, } "Spin-spray plating of spinel ferrite films on semiconductor substrates", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); doi: 10.1117/12.21660; https://doi.org/10.1117/12.21660
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