HgCdTe on Si for hybrid and monolithic FPAs

Kenneth R. Zanio

doi:10.1117/12.21726

1 September 1990 HgCdTe on Si for hybrid and monolithic FPAs

Kenneth R. Zanio

Proceedings Volume 1308, Infrared Detectors and Focal Plane Arrays; (1990) https://doi.org/10.1117/12.21726
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

MWIR HgCdTe arrays have been prepared on Si substrates for hybrid FPAs. HgCdTe has also been grown directly on the Si readout for developing monolithic HgCdTe/Si FPAs. CdTe, Al2O3 and Si substrates were included in a 35 parameter model for estimating the cost of both monolithic and hybrid HgCdTe FPAs. The model shows the monolithic approach on large Si substrates to be the preferred approach for reducing HgCdTe FPAs cost.

Citation Download Citation

Kenneth R. Zanio "HgCdTe on Si for hybrid and monolithic FPAs", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); https://doi.org/10.1117/12.21726

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