1 September 1990 Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 um
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Abstract
Separate absorption and multiplication InGaAs/InP avalanche photodiodes (SAM-APDs) with a floating guard ring structure that is well-suited to array applications have been successfully demonstrated. Individual APDs have breakdown voltages greater than 80 V, multiplications over 40 at 100 nA dark current, and uniform spatial gain profiles. Uniform I-V characteristics and gains have been measured over linear dimensions as large as 1.2 cm. Gains over 10 at low multiplied dark currents were measured on 21 consecutive devices at the wafer level.
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Donald A. Ackley, J. Hladky, M. Kazakia, S. M. Mason, G. C. Erickson, Gregory H. Olsen, Vladimir S. Ban, Stephen R. Forrest, Craig O. Staller, "Linear arrays of InGaAs/InP avalanche photodiodes for 1.0-1.7 um", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21735; https://doi.org/10.1117/12.21735
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