Monolithic silicon Schottky barrier IR FPAs are described which include new design features. The features are intended to optimize the sensitive diode area in each pixel. The nonimaging area of the pixels is reduced by a field plate approach to edge leakage suppression and by column multiplexing and automatic demultiplexing in the focal plane array. A four-phase meander channel CCD structure further minimizes readout area. A design figure of merit is defined and introduced to compare the fill factors of two arrays. The FPA fabrication and operation are discussed. With an NMOS compatible wafer process, fill factors of approximately 50 percent were obtained for small pixel dimensions. The new design features are shown to significantly increase the fill factor. The performance of the FPAs is shown to be adequate for both medium-wavelength PtSi (at 83 K) and long-wavelength IrSi (at 50 K) diodes.
Michael J. McNutt, Michael J. McNutt,
"Monolithic Schottky-barrier focal plane arrays with high fill factors", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21723; https://doi.org/10.1117/12.21723