1 September 1990 New meander channel 2-D CCD imager on GaAs
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The design, fabrication, and operation of a two-phase meander-channel CCD imager on GaAs are described. The fabrication process is based on the use of anodic oxidation for producing thin dielectric isolations between close-packed Schottky-barrier metal electrodes and the employment of recessed gates for producing self-aligned potential barriers between the adjacent charge wells of the meander channel. Additionally, the semiinsulating property of GaAs is utilized in order to produce the high-speed photoconductive sensors. It is shown that such imagers can have unit cell sizes and pixel densities comparable to their silicon counterparts but offer the speed of performance higher by about one order of magnitude.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter B. Kosel, Peter B. Kosel, Nercy Bozorgebrahimi, Nercy Bozorgebrahimi, } "New meander channel 2-D CCD imager on GaAs", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); doi: 10.1117/12.21736; https://doi.org/10.1117/12.21736


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