Nickel silicide Schottky-barrier detectors for short-wavelength infrared applications

Jerzy M. Kurianski; J. Van Damme; Jan P. Vermeiren; Karen Maex; Cor L. Claeys

doi:10.1117/12.21714

1 September 1990 Nickel silicide Schottky-barrier detectors for short-wavelength infrared applications

Jerzy M. Kurianski, J. Van Damme, Jan P. Vermeiren, Karen Maex, Cor L. Claeys

Proceedings Volume 1308, Infrared Detectors and Focal Plane Arrays; (1990) https://doi.org/10.1117/12.21714
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

The utilization of both cobalt and nickel silicides as Schottky detectors is presented with both theoretical and experimental supporting data. The uses considered are limited to those with a typical cut-off frequency of more than 2.2 microns, such as earth observation and satellite imaging spectroscopy. The theoretical calculations of key parameters of Schottky-barrier detectors are discussed, including quantum efficiency, the dark current, and the noise. Experimentally, Co and Ni layers were tested on silicon wafers at a variety of temperatures and layer thicknesses. Average values for the barrier height, activation analysis, and quantum efficiency are given and compared. The dark current for both Ni and Co is shown to be negligible below 140-160 K, and Ni quantum efficiencies are higher than those for Co, as is the measured barrier height. The theoretical and technological requirements are met by both cobalt and nickel silicides. The characteristics tested show that Ni and Co silicides are appropriate for realizing large focal planes with high dark current and responsivity homogeneity.

Citation Download Citation

Jerzy M. Kurianski, J. Van Damme, Jan P. Vermeiren, Karen Maex, and Cor L. Claeys "Nickel silicide Schottky-barrier detectors for short-wavelength infrared applications", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); https://doi.org/10.1117/12.21714

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