Paper
18 March 2024 Back-illuminated image sensor for hyperspectral application based on P-type high-resistivity silicon substrate
Author Affiliations +
Proceedings Volume 13104, Advanced Fiber Laser Conference (AFL2023); 131046L (2024) https://doi.org/10.1117/12.3023797
Event: Advanced Fiber Laser Conference (AFL2023), 2023, Shenzhen, China
Abstract
In this paper, a CCD image sensor based on P-type high-resistivity silicon substrate is designed and developed. The effective array size of the device is 6144×526 pixels, and the pixel size is 15μm×15μm. The device adopts the design of large area boron injection in the non-photosensitive region, which improves the amplifier characteristics of the P-type high-resistivity silicon-based CCD. The linear operating range of the amplifier is extended from 16.0V~16.5V before optimization to 10.0V~14.0V, and the DC gain is increased from 0.50 before optimization to 0.85. The device employs the visible and near-infrared back-illumination antireflection film design. The average quantum efficiency of the device is better than 0.85 in the wavelength range of 400nm~750nm, and the quantum efficiency can reach 0.43 at the near-infrared wavelength of 900nm. The device is designed by non-pushing-junction multi-energy boron-injection technology, and the MTF of the device is better than 0.40 under complex light condition.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Changju Liu, Hong Yang, Xueping Bai, Jin Li, Xuefei Wu, Jiangtao Xu, Xiuyu Wang, and Shunhu Gu "Back-illuminated image sensor for hyperspectral application based on P-type high-resistivity silicon substrate", Proc. SPIE 13104, Advanced Fiber Laser Conference (AFL2023), 131046L (18 March 2024); https://doi.org/10.1117/12.3023797
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KEYWORDS
Quantum devices

Silicon

Design

Quantum efficiency

Charge-coupled devices

Modulation transfer functions

CCD image sensors

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