Paper
1 September 1990 Effect of neutron irradiation on the properties of AlGaAs/GaAs laser diodes
Charles E. Barnes, Donald G. Heflinger, Richard D. Reel
Author Affiliations +
Proceedings Volume 1314, Fibre Optics '90; (1990) https://doi.org/10.1117/12.21978
Event: Fibre Optics '90, 1990, London, United Kingdom
Abstract
The effects of neutron irradiation on several properties of both single and multiple stripe laser diodes have been examined. Prior to fast neutron irradiation, total light output as a function of laser current, threshold current, near-field pattern, far-field pattern, and laser output wavelength spectra were measured at room temperature. These measurements were then repeated at intermittent neutron fluence levels. It was observed that the threshold current increased with neutron fluence for all devices examined. In contrast, neutron irradiation had only an indirect effect on the remainder of the laser diode properties in that the higher currents required for operation after irradiation caused variations in these properties.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles E. Barnes, Donald G. Heflinger, and Richard D. Reel "Effect of neutron irradiation on the properties of AlGaAs/GaAs laser diodes", Proc. SPIE 1314, Fibre Optics '90, (1 September 1990); https://doi.org/10.1117/12.21978
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Cited by 4 scholarly publications.
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KEYWORDS
Semiconductor lasers

Laser damage threshold

Near field

Diodes

Pulsed laser operation

Lithium

Sensors

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