1 July 1990 Optical band-elimination filter made of optically active uniaxial crystal of AgGaSe2 for A1GaAs semiconductor laser
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Proceedings Volume 1319, Optics in Complex Systems; (1990) https://doi.org/10.1117/12.34869
Event: 15th International Optics in Complex Systems, 1990, Garmisch, Germany
Abstract
The optical band-elimination filter (OBEF) with narrow band is constructed from two polarizers and an optically active uniaxial crystal of AgGaSe2 for the application of Raman spectroscopy. Experimental results show that this OBEF cap eliminate sufficiently the emission of A1GaAs semiconductor laser. 1 .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiromichi Horinaka, Nobuyuki Yamamoto, "Optical band-elimination filter made of optically active uniaxial crystal of AgGaSe2 for A1GaAs semiconductor laser", Proc. SPIE 1319, Optics in Complex Systems, (1 July 1990); doi: 10.1117/12.34869; https://doi.org/10.1117/12.34869
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