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1 July 1990 Optical memory based on the ellipsometric principle
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Proceedings Volume 1319, Optics in Complex Systems; (1990)
Event: 15th International Optics in Complex Systems, 1990, Garmisch, Germany
An optical three-dimensional multilayer memory device based on the effipsometric principle is presented. The possibilty to utilize the flexibility of organic layers e. g. conducting polymers will be discussed. PRINCIPLES A concept of an optical three-dimensional memory device based on the ellipsometric principle1 is presented. This " effipsometric" memory is a thin film multilayez device with an optical read-out. The information is contained in the optical properties of thin films and is read by analyzing the state of polarization ofa polarized light beam reflted at oblique incidence from a memory cell. The device is here examplified with the case of two layers on a substrate which is equivalent to a memory cell capable of storing one 2-bit word. If the optical properties of the two layers can be controlled independently we can generate 4 different states of polarization in the reflected beam corresponding to the " logical states" (0 (0 (1 and (1 ofthe memory cell. In a generalization to n layers it is possible to have 2fl different states. In other words an n-bit word can be stored at one location. Fig. 1. An optical memory device having 2-bit memory cells. With an ellipsometric read-out the state of polarization in the reflected beam is described by the two ellipsometric angles and These angles can be determined with a precision better than 0. 01''. The lateral resolution limiting the memory
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roger Jansson, Hans Arwin, and Ingemar Lundstroem "Optical memory based on the ellipsometric principle", Proc. SPIE 1319, Optics in Complex Systems, (1 July 1990);

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