1 July 1990 Picosecond four-wave mixing in silicon
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Proceedings Volume 1319, Optics in Complex Systems; (1990) https://doi.org/10.1117/12.22276
Event: 15th International Optics in Complex Systems, 1990, Garmisch, Germany
Abstract
We have studied the temporal response of four-wave mixing in silicon to study the coherence of picosecond pulses and the diffusion of free carriers. The measurements were done at room temperature. The sample used was an N-type monocrystalline silicon with the impurity density of 5 1O15 cm-3.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter Maly, Peter Maly, Jaroslav Pantoflicek, Jaroslav Pantoflicek, A. Svoboda, A. Svoboda, } "Picosecond four-wave mixing in silicon", Proc. SPIE 1319, Optics in Complex Systems, (1 July 1990); doi: 10.1117/12.22276; https://doi.org/10.1117/12.22276
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