Quaternary Alloy Infrared Heterojunction Detectors

A. R. Clawson; W. Y. Lum; H. H. Wieder

doi:10.1117/12.956051

6 June 1978 Quaternary Alloy Infrared Heterojunction Detectors

A. R. Clawson, W. Y. Lum, H. H. Wieder

Proceedings Volume 0132, Utilization of Infrared Detectors; (1978) https://doi.org/10.1117/12.956051
Event: 1978 Los Angeles Technical Symposium, 1978, Los Angeles, United States

Abstract

Single heterojunction photodiodes suitable for the 1.0 to 1.3 µm spectral region of interest for fiber optics communication have been prepared from lattice-matched p-type epilayers of the quaternary III--V alloy semiconductor InGaAsP on n-type InP substrates. The characteristics of these heterojunctions are demonstrated by mesa photodiodes made from Zn-doped epilayers of composition In0.84Ga0.16As0.34P0.66 on Sn-doped InP. Their room temperature spectral response extends from the q, 0.96 µm self-filtering cutoff of the InP substrate to Ëœ 1.13 µm determined by the bandgap of this particular quaternary composition. Responsivities of 0.46 A/W and external quantum efficiencies of 0.54 are measured at 1.05 µm.

Citation Download Citation

A. R. Clawson, W. Y. Lum, and H. H. Wieder "Quaternary Alloy Infrared Heterojunction Detectors", Proc. SPIE 0132, Utilization of Infrared Detectors, (6 June 1978); https://doi.org/10.1117/12.956051

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