1 October 1990 Submicron thin-film MOM diodes for the detection of 10-um infrared laser radiation
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Proceedings Volume 1320, Infrared Technology and Applications; (1990) https://doi.org/10.1117/12.22322
Event: Eighth International Conference Infrared Technology and Applications, 1990, London, United Kingdom
Abstract
We manufacture thin-film Ni-NiO-Ni diodes for the detection of 10 p,m CO-laser radiation with the aid of electron and UV lithography and sputtering techniques. The minimum dimensions are 0.4 tm. The thickness of the oxide layers is of the order of 50 A. According to theory, the response of MOM diodes to infrared radiation should be proportional to the second derivative d21/dV2 of dc I-V characteristics of these diodes. However, part of the response of the MOM diodes originates in the thermal heating by the infrared radiation. Consequently, we have measured the dc I-V characteristics as well as the response to cw 10 .tm-CO2-laser radiation of Ni-NiO-Ni diodes at room temperature for different orientations of the diodes with respect to the incident laser radiation and its polarisation. For Ni-NiO-Ni diodes we have observed a cosine dependence of the signal on the angle of the polarisation versus the antenna which represents the proper non-thermal nonlinear response of the diode. At the moment, the coupling factor is of the order of 70. The MOM diodes and their thin-film metal-strip antennas are attached to Si wafers. The high refractive index of bulk Si at 10 tm wavelength diminishes thç coupling of the 10 p.m laser radiation to the MOM-diode by the attached thin-film metal strip antenna. Therefore, we reduce the thickness of the Si wafer on the back of the MOM diodes and their antennas to about 5p.m by etching. Thus, we increase the transmission of the Si wafer under the metal-strip antenna and improve the antenna performance. Furthermore, we try to increase the sensitivity of the diodes by further reduction of their minimum dimensions, which can be achieved by direct writing with the electron beam of the electron-beamlithography facility at Centre Suisse d'Electronique et de Microtechnique, Neuchâtel, Switzerland.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ingrid Wilke, W. Herrmann, Fritz K. Kneubuehl, "Submicron thin-film MOM diodes for the detection of 10-um infrared laser radiation", Proc. SPIE 1320, Infrared Technology and Applications, (1 October 1990); doi: 10.1117/12.22322; https://doi.org/10.1117/12.22322
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