Stress-related phenomena in reactively dc magnetron sputtered aluminum nitride thin films

Roland Zarwasch; H. Oefner; Eduard P. Rille; Hans K. Pulker

doi:10.1117/12.22431

1 December 1990 Stress-related phenomena in reactively dc-magnetron-sputtered aluminum nitride thin films

Roland Zarwasch, H. Oefner, Eduard P. Rille, Hans K. Pulker

Author Affiliations +

Proceedings Volume 1324, Modeling of Optical Thin Films II; (1990) https://doi.org/10.1117/12.22431
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

Aluminum nitride films were deposited on fused silica by reactive dc magnetron sputtering from an Al-target in an Ar/N2 atmosphere. In-situ measurements during the deposition provide data concerning mechanical stresses inherent to the growing thin films. By variation of both the composition of the sputtering gas (Ar,N2) and the total gas flow in the vacuum chamber, the occuring intrinsic stresses could be shifted in magnitude and direction. Stress values of the thin films ranged from -1.2GPa (compressive) to +1.2GPa (tensile) when the Ar/N2 ratio was varied between 3:1 and 1:3 for the different total gas flows of 5Osccm, lOOsccm, and 200sccm (corresponding to total gas pressures of approximately 2x101Pa, 4x101Pa, and 8x101Pa respectively). Investigation of optical film properties, such as refractive index, as well as of structural properties were carried out and the results were related to the state of stress the films were in. The optical characterization (n,k) was achieved by photospectrometry. Structure and chemical composition were analysed by electron diffraction,transmission electron microscopy (ThM) and Auger electron spectroscopy (AES) respectively.

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Roland Zarwasch, H. Oefner, Eduard P. Rille, and Hans K. Pulker "Stress-related phenomena in reactively dc-magnetron-sputtered aluminum nitride thin films", Proc. SPIE 1324, Modeling of Optical Thin Films II, (1 December 1990); https://doi.org/10.1117/12.22431

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