Paper
1 December 1990 Epitaxial growth of diamond thin films on cubic boron nitride surfaces
Tadao Inuzuka, Satoshi Koizumi
Author Affiliations +
Abstract
Diacuond thin filnis can be grown epitaxially on cubic born nitride (c-BN) surfaces using DC plasilia cheniical vapor desposition. As a substrate of this experinient, high pressure synthesized c-BN particles (2OO---5OOuni in diatueter) are used. At the early growth stage of the dianiond filuis on c—BN lll} , {lOO} and i22l} surfces, it is found that the growth wanner of the films is nucleation—growth type showing the island density of about 1011 cm 2• The coalescence of the growing island is also found by SEM observation and the continuous filn is formed at the film thick of 2000A and l,uni for the substrate surfaces of {lll} and {lOO} respectively. The epitaxial re1ations on typical c-BN surfaces such as till] and lOO} are {ll1} , (110) diaiuond 1/ Cll1} , (110) c—BN {lOO} , (110) diauiond /1 1OO} , (110) c—BN. The (100) epitaxial growth of diamond on C221} of c-BN is also observed. This is interpreted by twinning introduced in the diaciond filtns during crystal growth.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadao Inuzuka and Satoshi Koizumi "Epitaxial growth of diamond thin films on cubic boron nitride surfaces", Proc. SPIE 1325, Diamond Optics III, (1 December 1990); https://doi.org/10.1117/12.22437
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Cited by 2 scholarly publications.
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KEYWORDS
Diamond

Particles

Crystals

Thin films

Scanning electron microscopy

Boron

Chemical vapor deposition

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