1 December 1990 High-rate chemical vapor deposition of diamond films by dc arc discharge in hydrogen-methane mixture gas
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Abstract
Polycrystalline diamond films with high growth-rate have been synthesized by dc arc discharge plasma CVD in a mixture gas of CH4 (1) and 112 (99). The diamond films are deposited on water-cooled silicon and molybdenum substrates at gaseous pressure of about 200 Torr. The typical arc discharge is performed at 200V and 4A while the hydrogen flow rate is about 3000 3500 sccm. The crystallinity of diamond films prepared are characterized by Xray differaction (XRD) Raman scattering spectroscopy and scanning electron microscopy (SEM). It is verified by XRD and Raman measurements that the synthesized diamond films are identified as natural cubic diamond structure and contain substantially no graphite or amorphous carbon. SEM photographs show that the crystal grain size reachs 60 80 im with good crystal habit and the average growth rate of diamond films deposited during 4 hours is about 40 - 60 pm/h. As shown by SEM photographs the diamond grain size obviously depends on the local nucleation density. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiang-Liu Jiang, Xiang-Liu Jiang, Fang-Qing Zhang, Fang-Qing Zhang, Jiang-Qi Li, Jiang-Qi Li, Bin Yang, Bin Yang, Guang-Hua Chen, Guang-Hua Chen, } "High-rate chemical vapor deposition of diamond films by dc arc discharge in hydrogen-methane mixture gas", Proc. SPIE 1325, Diamond Optics III, (1 December 1990); doi: 10.1117/12.22474; https://doi.org/10.1117/12.22474
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