1 December 1990 Microstructure of diamond films as a function of deposition conditions
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Abstract
The microstructure of polycrystalline diamond films grown by microwave plasma assisted chemical vapor deposition (PACVD) have been observed as a function of growth temperature substrate identity and surface condition. Our highest microwave PACVD growth rates have been achieved in (1 10) axis normal oriented polycrystalline diamond films. Results indicate thai at growth temperatures below 650C kinetically dominated processes induce the formation of a preferential (1 10) axis normal orientation in diamond films with micron scale microstructure1 This orientation can be sustained on silicon boron nitride and silicon nitride substrates to filrr thicknesses in excess of 60 microns through the occurrence of (I I I) twin defects. Such fiIm have the high density and generally uniform microstructure required for optical applications. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alan B. Harker, Jeffrey F. DeNatale, John F. Flintoff, "Microstructure of diamond films as a function of deposition conditions", Proc. SPIE 1325, Diamond Optics III, (1 December 1990); doi: 10.1117/12.22459; https://doi.org/10.1117/12.22459
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KEYWORDS
Diamond

Crystals

Silicon

Polishing

Silicon films

Boron

Photomicroscopy

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