1 December 1990 Subbandgap-excited photoconductivity in CVD diamond films
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The results of room-temperature photoconductivity measurements on free-standing diamond films are reported. The films were grown on Si(100) substrates by hot filament-assisted chemical vapor deposition (CVD) from a methane/hydrogen mixture and ranged in thickness from 40 to 100 pm. The observed photocurrents in unintentionally doped films increased monotonically with increasing excitation energy. The films are found to exhibit photocurrent excitation similar to that observed for bulk diamond. In films doped with either N or Li the photocurrent exhibited broad structure superposed on the monotonic background. The photocurrent was found to depend on the chopping frequency of the excitation light decreasing with increasing chopper frequency indicative of trapping center dominated recombination dynamics. Schottky barrier heights were determined from the photoresponse for Au on CVD diamond film and on (100) oriented single crystalline type ila natural diamond. The measured barrier heights were 2. 02 and 2. 24 eV respectively in good agreement with previously measured values. A second barrier height was obtained from a threshold for internal photoemission at lower energies P4. 35 eV. We were able to observe for the first time an optical enhancement of 20X in the photocurrent using an optical biasing technique. 1.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles P. Beetz, Charles P. Beetz, B. A. Lincoln, B. A. Lincoln, David R. Winn, David R. Winn, } "Subbandgap-excited photoconductivity in CVD diamond films", Proc. SPIE 1325, Diamond Optics III, (1 December 1990); doi: 10.1117/12.22463; https://doi.org/10.1117/12.22463

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