Large diameter sapphire dome: fabrication and characterization

John W. Locher; Harold E. Bennett; Philip C. Archibald; C. T. Newmyer

doi:10.1117/12.22476

1 October 1990 Large diameter sapphire dome: fabrication and characterization

John W. Locher, Harold E. Bennett, Philip C. Archibald, C. T. Newmyer

Proceedings Volume 1326, Window and Dome Technologies and Materials II; (1990) https://doi.org/10.1117/12.22476
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

A novel sapphire (99.99% Al2O single crystal) dome growth technique is described whereby a dome of a nominal radius of 38 to 40 mm is produced. A modified Edge-Defined Film-Fed Growth (EFGR ) technique is used to directly grow a dome blank with a wall thickness of 2.5 to 3 mm which requires a minimum of mechanical finishing and polishing. Total integrated scatter (TIS) results for the polished dome are reported for .6328 um and 3.39 um wavelengths. An evaluation of striae and bulk inhomogeneities is also given.

Citation Download Citation

John W. Locher, Harold E. Bennett, Philip C. Archibald, and C. T. Newmyer "Large diameter sapphire dome: fabrication and characterization", Proc. SPIE 1326, Window and Dome Technologies and Materials II, (1 October 1990); https://doi.org/10.1117/12.22476

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