Paper
1 October 1990 Minimization of IR absorption by germanium at elevated temperatures
Jroy C. Richter, Charles R. Poznich, Dennis W. Thomas
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Abstract
It has previously been determined that absorption of infrared radiation in germanium due to free carriers can be controlled to some extent by doping. As a result, the use of germanium in infrared systems can be extended to thermal environments not possible before. This can be accomplished by using lower resistivity germanium at elevated temperatures instead of the standard optical grade germanium used near room temperature (25°). In this work, the absorption of 3 to 11.9 tm radiation by germanium of various resistivities was determined at several discrete temperatures from room temperature to 120°C. The germanium samples ranged in resistivity from 0.1 to 40 ohm-cm. The data from these measurements were used to formulate graphical representations of the relationships between room temperature resistivity, absorption coefficient, wavelength and temperature.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jroy C. Richter, Charles R. Poznich, and Dennis W. Thomas "Minimization of IR absorption by germanium at elevated temperatures", Proc. SPIE 1326, Window and Dome Technologies and Materials II, (1 October 1990); https://doi.org/10.1117/12.22488
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Cited by 6 scholarly publications.
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KEYWORDS
Absorption

Germanium

Domes

Electrons

Temperature metrology

Chemical species

Doping

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