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1 October 1990 KrF laser light interaction with intrinsic defects in silica
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We report the interaction of sub-band gap 5. 0 eV (KrF) laser irradiation with intrinsic defects in Type III and IV silica. The silicas were divided into two groups for laser interaction studies. One group was first irradiated with 137Cs to a dose of 6. 6 x iO?'' rads. The second group was irradiated with laser light in the as-received state. Optical absorptions of the samples from 3 to 6 eV were measured before and after 200 300 700 and 1500 pulses (l90mJ/pulse-cm2) of KrF laser light. Neither optical bands nor EPR spectra were observed in the as-received silicas. The spectra of samples pre-irradiated with 137Cs contained components due to peroxy radicals non-bridging oxygen hole centers E''centers and E" centers. The concentrations of these defects were dependent upon silica type. Subsequent laser irradiation of the gamma-ray irradiated samples bleached bands at 5. 4 and 4. 8 eV in type III and type IV silica respectively. The EPR spectra showed that laser irradiation bleached the peroxy radical and produced a new oxygen related center (ORC) in type IV silica. No detectable change in the non-bridging oxygen hole center concentration in the type III silica samples were observed. E'' center concentration increased. For the same laser irradiations the concentration of E'' centers produced in the as-received samples was a factor --''20 less than in the samples first irradiated with 137Cs. We suggest that
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert H. Magruder III, Paul W. Wang, Robert A. Weeks, and Donald L. Kinser "KrF laser light interaction with intrinsic defects in silica", Proc. SPIE 1327, Properties and Characteristics of Optical Glass II, (1 October 1990);

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