Chemical-vapor-deposited silicon and silicon carbide optical substrates for severe environments

Jitendra Singh Goela; Michael A. Pickering; Raymond L. Taylor

doi:10.1117/12.47515

1 January 1991 Chemical-vapor-deposited silicon and silicon carbide optical substrates for severe environments

Jitendra Singh Goela, Michael A. Pickering, Raymond L. Taylor

Proceedings Volume 1330, Optical Surfaces Resistant to Severe Environments; (1991) https://doi.org/10.1117/12.47515
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

In this paper properties of chemical vapor deposited (CVD) SiC and Si optical substrates for use in severe environments are presented. Important data on CVD SiC concerning the elastic modulus polishability scattering measurement thermal and cryogenic stability degradation due to atomic oxygen and electron beam are included. Further scattering measurement data and atomic oxygen degradation effects on CVD Si are also presented. These measurements show that CVD SiC substrates exhibit excellent polishability 1 A RMS) with low scatter good retention of mechanical properties up to 1500 C superior thermal and cryogenic stability (-190 C to 1350 C) and high resistance to atomic oxygen and electron beam degradation. VD Si substrates exhibit excellent polishability 2 A RNS) with low scatter and good resistance to atomic oxygen degradation. These preliminary results suggest that CVD SiC and Si are good optical substrates for severe environment such as outer space lasers combustion and synchrotron x-rays. 1 . 0

Citation Download Citation

Jitendra Singh Goela, Michael A. Pickering, and Raymond L. Taylor "Chemical-vapor-deposited silicon and silicon carbide optical substrates for severe environments", Proc. SPIE 1330, Optical Surfaces Resistant to Severe Environments, (1 January 1991); https://doi.org/10.1117/12.47515

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