Light scattering from electrons in semiconductor microstructures: two-dimensional electron gas

A. Pinczuk; Donald E. Heiman; J. P. Valladares; Loren N. Pfeiffer; Kenneth W. West

doi:10.1117/12.22888

1 November 1990 Light scattering from electrons in semiconductor microstructures: two-dimensional electron gas

A. Pinczuk, Donald E. Heiman, J. P. Valladares, Loren N. Pfeiffer, Kenneth W. West

Proceedings Volume 1336, Raman and Luminescence Spectroscopies in Technology II; (1990) https://doi.org/10.1117/12.22888
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

We present a review of our recent resonant inelastic light scattering research of the ultra-high mobility two-dimensional electron gas in GaAs quantum wells. Spectroscopy of intersubband excitations shows that exchange interactions are larger than previously anticipated. Light scattering by large wavevector inter-Landau-level excitations displays the excitonic binding and roton minima in the mode dispersions that are predicted by Hartree-Fock theories.

Citation Download Citation

A. Pinczuk, Donald E. Heiman, J. P. Valladares, Loren N. Pfeiffer, and Kenneth W. West "Light scattering from electrons in semiconductor microstructures: two-dimensional electron gas", Proc. SPIE 1336, Raman and Luminescence Spectroscopies in Technology II, (1 November 1990); https://doi.org/10.1117/12.22888

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