1 November 1990 Raman-scattering characterization of atomic layer semiconductor superlattices
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Raman spectroscopy is a widely applied technique for investigating the dynamical and structural properties of atomic-layer semiconductor superlawces. The low-frequency acoustic phonons in such structures are influenced by the average lattice properties, the overall periodicities within the structure, and the boundary conditions, whereas the optic phonons are sensitive to the local structure, the nature of the interfaces, and the intralayer strain. Examples taken from recent studies of phonons in thin layer superlattices composed of GaAS/AlAS, InAs/GaSb and SilGe are used to demonstrate the usefulness of the Raman technique.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David J. Lockwood, David J. Lockwood, "Raman-scattering characterization of atomic layer semiconductor superlattices", Proc. SPIE 1336, Raman and Luminescence Spectroscopies in Technology II, (1 November 1990); doi: 10.1117/12.22889; https://doi.org/10.1117/12.22889

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