Attenuation of millimeter wave in moving Gaussian spot illuminated semiconductor panel

Mohammad H. Rahnavard; Aref Bakhtazad

doi:10.1117/12.23000

1 November 1990 Attenuation of millimeter wave in moving Gaussian spot illuminated semiconductor panel

Mohammad H. Rahnavard, Aref Bakhtazad

Proceedings Volume 1338, Optoelectronic Devices and Applications; (1990) https://doi.org/10.1117/12.23000
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

Scanning laser beam semiconductor panel can be used for conversion of millimeter waves to visual displays. For this easy and direct method of conversion, the behavior of semiconductor panel under scanning laser beam is required. Formulas for excess carriers due to moving spot of light have beam obtained. Using these formulas single path total field attenuation through semiconductor panel for scanning laser light spot excitation as a function of scanning velocity, position and laser beam width are studied.

Citation Download Citation

Mohammad H. Rahnavard and Aref Bakhtazad "Attenuation of millimeter wave in moving Gaussian spot illuminated semiconductor panel", Proc. SPIE 1338, Optoelectronic Devices and Applications, (1 November 1990); https://doi.org/10.1117/12.23000

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