Paper
1 November 1990 Investigation of the electrical behavior of integrated waveguide-photodetectors: application to integrated waveguide-PIN photodiode
Jean-Francois Vinchant, Jean-Pierre Vilcot, Didier J. Decoster
Author Affiliations +
Abstract
We present the electrical behavior of an integrated waveguide/photodetector based on the absorption of the evanescent optical field in an absorbing layer, deposited on the top of the waveguiding layer. We establish the expression of the electron-hole pair generation rate, for such a device. Then, we apply this result to the calculation of the dynamic quantum efficiency of an integrated waveguide/PIN-photodiode. The static and dynamic behaviors of GaInAs PIN-photodiodes monolithically integrated on a classical n/nt InP homostructure waveguide or on a GaInAsP/InP heterostructure waveguide are discussed and optimized structures are pointed out.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Francois Vinchant, Jean-Pierre Vilcot, and Didier J. Decoster "Investigation of the electrical behavior of integrated waveguide-photodetectors: application to integrated waveguide-PIN photodiode", Proc. SPIE 1338, Optoelectronic Devices and Applications, (1 November 1990); https://doi.org/10.1117/12.22981
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KEYWORDS
Waveguides

Diffusion

Quantum efficiency

Optoelectronic devices

Capacitance

Photodetectors

Absorption

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