128x128 InGaAs detector array for 1.0-1.7 um

Gregory H. Olsen; Abhay M. Joshi; M. J. Lange; K. M. Woodruff; E. Mykietyn; D. G. Gay; G. C. Erickson; Donald A. Ackley; Vladimir S. Ban; Craig O. Staller

doi:10.1117/12.23121

1 November 1990 128x128 InGaAs detector array for 1.0-1.7 μm

Gregory H. Olsen, Abhay M. Joshi, M. J. Lange, K. M. Woodruff, E. Mykietyn, D. G. Gay, G. C. Erickson, Donald A. Ackley, Vladimir S. Ban, Craig O. Staller

Author Affiliations +

Proceedings Volume 1341, Infrared Technology XVI; (1990) https://doi.org/10.1117/12.23121
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

A two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region.

Citation Download Citation

Gregory H. Olsen, Abhay M. Joshi, M. J. Lange, K. M. Woodruff, E. Mykietyn, D. G. Gay, G. C. Erickson, Donald A. Ackley, Vladimir S. Ban, and Craig O. Staller "128x128 InGaAs detector array for 1.0-1.7 μm", Proc. SPIE 1341, Infrared Technology XVI, (1 November 1990); https://doi.org/10.1117/12.23121

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