1 November 1990 GaAs/AlGaAs multiquantum-well IR detectors
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GaAs/Al(0.31)Ga(0.69)As IR detector of multiquantum well structure with a single bound state in a GaAs well have been fabricated. The peak wavelength of spectral responsivity at 77 K was 8.3 microns. The measured responsivities were 20 V/W for A-type detectors, 65 V/W for B-type detectors, and 130 V/W for C-type detectors. The corresponding specific detectivities at peak wavelength were 2.8 x 10 exp 9 cm sq rt Hz/W, 2.7 x 10 exp 9 cm sq rt Hz/W, and 2.7 x 10 exp 9 cm sq rt Hz/W, respectively. These values are about one order lower than those of conventional CdHgTe photoconductive devices.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masatoshi Kobayashi, Masatoshi Kobayashi, Masahiko Nakanishi, Masahiko Nakanishi, Y. Notani, Y. Notani, K. Aono, K. Aono, Yoshiharu Komine, Yoshiharu Komine, Wataru Susaki, Wataru Susaki, } "GaAs/AlGaAs multiquantum-well IR detectors", Proc. SPIE 1341, Infrared Technology XVI, (1 November 1990); doi: 10.1117/12.23078; https://doi.org/10.1117/12.23078


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