1 February 1991 Resist schemes for soft x-ray lithography
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Abstract
Soft x-ray projection lithography in the 60-400 A wavelength range has recently demonstrated the ability to print 0.1 im resolution features in thin single layer and thicker trilayer resist films.7'8 However, for use on topographic substrates thicker resist layers with planarizing properties probably will be required. This paper analyzes resist absorption and planarization aspects of soft x-ray projection lithography, couples them with projections of potential multilayer and other types of reflectors and reviews resist approaches which are compatible with them. Primarily due to absorption issues and the strong processing tendency to retain a single layer resist technology, dry-developed resist schemes incorporating planarization are favored. Results for a variety of such schemes developed for deep-UV use are surveyed and recent results for soft x-ray exposure at 140 A are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary N. Taylor, Gary N. Taylor, Richard S. Hutton, Richard S. Hutton, David L. Windt, David L. Windt, William M. Mansfield, William M. Mansfield, } "Resist schemes for soft x-ray lithography", Proc. SPIE 1343, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography, (1 February 1991); doi: 10.1117/12.23198; https://doi.org/10.1117/12.23198
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