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1 February 1991 Silicon/silicon oxide and silicon/silicon nitride multilayers for XUV optical applications
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Si/Si02 and Si/Si3N4 multilayers have been fabricated using a locally made reactive diode if-sputtering systern. 'Ihe layer alternation is obtained by modulating a partial pressure of oxygen or nitrogen near the sample using a silicon target and argon as sputtering gas. 02 and N2 partial pressure conditions were optimized to deposit stoechiornetric Si02 and Si3TV4 films without significant reaction with the silicon target. In-situ kinetic ellipsometry was used to monitore both thick film and multilayer deposition. 'I'he different interfaces appear very sharp with a little contamination of the silicon layers especially using oxygen. The multilayers were characterized by gazing X-ray reflection ( Cu - K line ), and the reflectivity was measured in the soft X-ray range (120 - 350 A ) by synchrolroii radiation. BotI1 Si/Si02 and SiIS13N4 multilayers exhibit well defmed Bragg peaks with very narrow bandpasses ( two to three times lower than the conventional M'/Si multilayer ),and high absolute reflectivities (up to 22% at 1 30 A ). The soft X-ray performances of these mirrors are explained using the physical characteristics deduced from kinetic ellipsometry, grazing X-ray reflection, infrared absorption and transmission electron microscopy measurements.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pierre Boher, Philippe Houdy, Louis Hennet, Jean-Pierre Delaboudiniere, Mikhael Kuehne, Peter Mueller, Zhigang Li, and David J. Smith "Silicon/silicon oxide and silicon/silicon nitride multilayers for XUV optical applications", Proc. SPIE 1343, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography, (1 February 1991);


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