1 November 1990 PN-CDDs for the XMM satellite mission
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Abstract
Recent results on the on-chip electronics, transfer properties, and radiation entrance window of pn-CCDs are presented. With recently fabricated devices, an improved charge transfer efficiency per pixel of 0.9995 and an energy resolution of the CCD output stage of 5 e(-) rms have been measured. This performance is achieved without a degradation of other characteristics of the devices, such as an X-ray efficiency of 90 percent at 10 keV, more than a factor of 1000 better time resolution in the full frame mode in comparison with all other CCD concepts, and a one-dimensional spatial resolution of 24 microsec in the timing mode. The use of pn-junctions instead of MOS structures makes the devices intrinsically radiation resistant.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heinrich W. Braeuninger, Gerhard Lutz, Norbert Meidinger, Peter Predehl, Claus Reppin, Wolfgang Schreiber, Lothar Strueder, Joachim E. Truemper, Eckhard Kendziorra, Ruediger Staubert, Veljko Radeka, Pavel Rehak, S. Rescia, Elena Gatti, Antonio Longoni, Marco Sampietro, Peter Holl, Josef Kemmer, U. Prechtel, Helmut Riedel, T. Ziemann, "PN-CDDs for the XMM satellite mission", Proc. SPIE 1344, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy, (1 November 1990); doi: 10.1117/12.23267; https://doi.org/10.1117/12.23267
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KEYWORDS
Charge-coupled devices

Field effect transistors

X-rays

Silicon

Extreme ultraviolet

Gamma radiation

Transistors

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